11614hk tc-00002818/61312 tkim/30508pe tiim no. a1084-1/6 ordering information see detailed ordering and shipping information on page 2 of this data sheet. http://onsemi.com semiconductor components industries, llc, 2014 january, 2014 CPH6341 p-channel power mosfet C 30v, C 5a, 59m ? , single cph6 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. features ? low on-resistance ? high-speed switching ? 4v drive ? protection diode in specifcations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss --30 v gate-to-source voltage v gss 20 v drain current (dc) i d --5 a drain current ( pulse) i dp pw 10 m s, duty cycle 1% --20 a allowable power dissipation p d when mounted on ceramic substrate (900mm 2 0.8mm) 1.6 w channel temperature tch 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7018a-003 ordering number : ena1084b product & package information ? package : cph6 ? jeita, jedec : sc-74, sot-26, sot-457 ? minimum packing quantity : 3,000 pcs./reel packing type: tl marking electrical connection 3 4 1, 2, 5, 6 yt lot no. tl 1 : drain 2 : drain 3 : gate 4 : source 5 : drain 6 : drain cph6 3 2 1 64 5 2.9 0.05 0.4 2.8 1.6 0.2 0.6 0.6 0.9 0.2 0.15 0.95 CPH6341-tl-e CPH6341-tl-w
CPH6341 no. a1084-2/6 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d = -- 1ma, v gs =0v --30 v zero-gate voltage drain current i dss v ds = -- 30v, v gs =0v --1 m a gate-to-source leakage current i gss v gs =16v, v ds =0v 10 m a cutoff voltage v gs (off) v ds = -- 10v, i d = -- 1ma --1.2 --2.6 v forward transfer admittance | yfs | v ds = -- 10v, i d = -- 3a 2.8 4.8 s static drain-to-source on-state resistance r ds (on)1 i d = -- 3a, v gs = -- 10v 45 59 m ? r ds (on)2 i d = -- 1.5a, v gs = -- 4.5v 71 100 m ? r ds (on)3 i d = -- 1.5 a, v gs = -- 4v 82 115 m ? input capacitance ciss v ds =--10v, f=1mhz 430 pf output capacitance coss 105 pf reverse transfer capacitance crss 75 pf turn-on delay time t d (on) see specifed test circuit. 7.5 ns rise time t r 26 ns turn-off delay time t d (off) 45 ns fall time t f 35 ns total gate charge qg v ds =-- 15v, v gs =-- 10v, i d =-- 5a 10 nc gate-to-source charge qgs 2.0 nc gate-to-drain miller charge qgd 2.5 nc diode forward voltage v sd i s =-- 5a, v gs =0v --0.87 --1.2 v switching time test circuit ordering information device package shipping memo CPH6341-tl-e cph6 3,000pcs./reel pb-free CPH6341-tl-w pb-free and halogen free pw=10ms d.c.1% p. g 50? g s d i d = - -3a r l =5? v dd = - -15v v out CPH6341 v in 0v - -10v v in
CPH6341 no. a1084-3/6 i d -- v ds i d -- v gs drain current, i d - - a drain-to-source vo ltage, v ds - - v drain current, i d - - a gate-to-source vo ltage, v gs - - v 0 -- 1.0 -- 0.5 -- 3.0 -- 1.5 -- 3.5 -- 2.0 -- 4.0 -- 2.5 -- 4.5 -- 5.0 0- -0.2 -- 0.4- -0.6 -- 0.8- -1.0 -- 0.1- -0.3 -- 0.5- -0.7 -- 0.9 it13379 0- -1.5 -- 0.5- -2.5 -- 4.0 -- 3.5 -- 2.0 -- 1.0- -3.0 0 -- 2 -- 4 -- 6 -- 1 -- 3 -- 5 - -25 c it13380 - -4.0v v gs = - -2.5v - -3.5v - -4.5v - -6.0v ta =75 c v ds = - -10v - -10.0v 25 c - -3.0v - -16.0v i s -- v sd | y fs | -- i d forward tr ansfer admittance, | y fs | - - s drain current, i d - - a source current, i s - - a diode forward vo ltage, v sd - - v sw t ime - - i d ciss, coss, crss - - v ds switching t ime, s w t ime - - ns ciss, coss, crss - - pf drain current, i d - - a r ds (on) - - v gs r ds (on) -- ta static drain-to-source on-state resistance, r ds (on) - - m? static drain-to-source on-state resistance, r ds (on) - - m? gate-to-source vo ltage, v gs - - v ambient temperature, ta - - c drain-to-source vo ltage, v ds - - v it13383 it13384 -- 0.2- -0.4 -- 0.6- -0.8 -- 1.0- -1.2 0.1 1.0 7 5 3 2 10 7 5 3 2 -- 0.1 2 -- 0.01 23 57 -- 1.0 2 35 7 ta = - -25 c v ds = - -10v -- 0.01 2 3 -- 0.1 2 7 5 3 -- 1.0 2 7 5 v gs =0v -- 0.1- -1.0 23 57 -- 10 23 57 v dd = - -15v v gs = - -10v t d (on) t d (of f) t f it13385 0- -5 -- 10 -- 15 1000 7 5 5 3 2 100 7 3 -- 20 -- 30 -- 25 ciss coss crss it13386 10 2 3 2 7 3 5 100 2 7 5 ta =7 5 c 25 c - -25 c f=1mhz t r 0- -4 -- 2- -8 -- 12 -- 6- -10- -14- -16 20 40 60 80 120 100 140 160 0 it13381 it13382 i d = - -1.5a - -3.0a ta =25c 75 c 25 c -- 60 -- 40 -- 20 02 04 06 08 0 100 120 140 160 0 160 40 80 120 140 20 60 100 v gs = - -4.0v , i d = - -1.5a v gs = -- 10 v, i d = - -3.0a v gs = - -4.5v , i d = - -1.5a -- 10 35 7 3 -- 10 7 5
CPH6341 no. a1084-4/6 v gs -- qg to tal gate cha rg e, qg - - nc gate-to-source vo ltage, v gs - - v a s o drain-to-source vo ltage, v ds - - v 01 0 1357 9 2468 it13388 it13387 0 -- 1 -- 2 -- 3 -- 4 -- 5 -- 6 -- 7 -- 8 -- 9 -- 10 v ds = - -15v i d = - -5a -- 0.01 2 3 5 5 7 2 3 5 7 2 3 5 7 -- 10 -- 1.0 -- 0.1 2 3 -- 10 -- 1.0 23 57 23 57 23 52 35 77 -- 0.1 -- 0.01 i d = - -5a i dp = - -20a operation in thi s area is limited by r ds (on). dc operation 100ms 10ms pw 10ms 1ms 100ms ta =25 c single pulse when mounted on ceramic substrate (900mm 2 ?0.8mm) drain current, i d - - a p d -- ta ambient t emperature, ta - - c allowable power dissipation, p d - - w it13389 02 04 06 08 0 100 120 140 160 0 0.5 1.0 1.5 1.6 2.0 when mounted on ceramic substrate (900mm 2 ?0.8mm)
CPH6341 no. a1084-5/6 outline drawing land pattern example CPH6341-tl-e, CPH6341-tl-w mass (g) unit 0.015 * for reference mm unit: mm 0.6 2.4 1.4 0.95 0.95
CPH6341 ps no. a1084-6/6 note on usage : since the CPH6341 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner.
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